1 UT54ACS132E quadruple 2-input nand schmitt triggers october 2008 www.aeroflex.com/logic features ? 0.6 m crh cmos process - latchup immune ? high speed ? low power consumption ? wide operating power supply from 3.0v to 5.5v ? available qml q or v processes ? 14-lead flatpack description the ut54acs132 is a quadrup le 2-input nand gate with schmitt trigger input levels. a high applied on both the inputs forces the output to a low state. the devices are characterized ov er full hirel temperature range of -55 c to +125 c. logic symbol function table y1 (3) (6) y2 y3 (8) (11) y4 (1) a1 (2) b1 (4) a2 (5) b2 (9) a3 (10) b3 (12) a4 (13) b4 note: 1. logic symbol in accordance with ansi/ieee standard 91-1984 and iec publication 617-12. & inputs output an bn yn l l h l h h h l h h h l pinout 14-lead flatpack top view logic diagram v dd b4 a4 y4 b3 a3 y3 a1 b1 y1 a2 b2 y2 v ss 114 213 312 411 510 69 78 b4 a4 y4 b3 a3 y3 a1 b1 y1 a2 b2 y2
2 operational environment 1 notes: 1. logic will not latchup during radiation ex posure within the limits defined in the table. 2. device storage elements are immune to seu affects. absolute maximum ratings note: 1. stresses outside the listed absolute maxi mum ratings may cause permanent damage to the device. this is a stress rating only, functional operation of the device at these or any other conditions beyond lim its indicated in the operational sections is not recommended. exposure to absolute maximum ra ting conditions for extended periods may affect device reliability. recommended operating conditions parameter limit units total dose 1.0e6 rads(si) seu threshold 2 80 mev-cm 2 /mg sel threshold 120 mev-cm 2 /mg neutron fluence 1.0e14 n/cm 2 symbol parameter limit units v dd supply voltage -0.3 to 7.0 v v i/o voltage any pin -.3 to v dd + .3 v t stg storage temperature range -65 to +150 c t j maximum junction temperature +175 c t ls lead temperature (soldering 5 seconds) +300 c jc thermal resistance junction to case 20 c/w i i dc input current 10 ma p d maximum power dissipation 1 w symbol parameter limit units v dd supply voltage 3.0 to 5.5 v v in input voltage any pin 0 to v dd v t c temperature range -55 to +125 c
3 dc electrical characteris tics for the UT54ACS132E 7 ( v dd = 3.0v to 5.5v; v ss = 0v 6 ; -55 c < t c < +125 c) notes: 1. functional tests are conducted in accordance with mil-std-883 with th e following input test conditions: v ih = v ih (min) + 20%, - 0%; v il = v il (max) + 0%, - 50%, as specified herein, for ttl, cmos, or sc hmitt compatible inputs. devices may be test ed using any input voltage within the abov e specified range, but are guaranteed to v ih (min) and v il (max). 2. supplied as a design limit but not guaranteed or tested. 3. per mil-prf-38535, for current density 5.0e5 amps/cm 2 , the maximum product of load capac itance (per output buffer) times frequency should not exceed 3,765pf/ mhz. 4. not more than one output may be shorted at a time for maximum duration of one second. 5. capacitance measured for initial qualifi cation and when design changes may affect the value. capacitance is measured between the designated terminal and v ss at frequency of 1mhz and a signal amplitude of 50mv rms maximum. 6. maximum allowable relative shift equals 50mv. 7. all specifications va lid for radiation dose 1e6 rads(si) per mil-std-883 method 1019 condition a and section 3.11.2. 8. power dissipation specified per switching output. 9. this value is guaranteed based on characterization data, but not tested. symbol description condition vdd min max unit v t+ schmitt trigger positive-going threshold 1 3.0v 2.1 v 5.5v 3.85 v t- schmitt trigger negative-going threshold 1 3.0v 0.9 v 5.5v 1.65 v h hysteresis 2 (v t+ - v t- ) 3.0v 0.3 1.2 v 4.5v .6 1.5 i in input leakage current v in = v dd or v ss 5.5v -1 1 a v ol low-level output voltage 3 i ol = 100 a 3.0v 0.25 v 4.5v 0.25 v oh high-level output voltage 3 i oh = -100 a 3.0v 2.75 v 4.5v 4.25 i os short-circuit output current 2 ,4 v o = v dd and v ss 3.0v -100 100 ma 5.5v -200 200 i ol low level output current 9 v in = v dd or v ss v ol = 0.4v 3.0v 6 ma 5.5v 8 i oh high level output current 9 v in = v dd or v ss v oh = v dd -0.4v 3.0v -6 ma 5.5v -8 p total power dissipation 2, 8 c l = 50pf 5.5v 3.0v 1.9 0.76 mw/ mhz i ddq quiescent supply current v in = v dd or v ss 5.5v 10 a c in input capacitance 5 ? = 1mhz 0v 15 pf c out output capacitance 5 ? = 1mhz 0v 15 pf
4 ac electrical characteristics for the UT54ACS132E 2 (v dd = 3.0v to 5.5v; v ss = 0v 1 , -55 c < t c < +125 c) notes: 1. maximum allowable relative shift equals 50mv. 2. all specifications valid for radiation dose 1e6 rads(si) per mil-std-883 method 1019 condition a and section 3.11.2. symbol parameter v dd minimum maximum unit t phl input to yn c l = 30pf 3.0v & 3.6v 2 12 ns 4.5v & 5.5v 2 8 c l = 50pf 3.0v & 3.6v 2 16 ns 4.5v & 5.5v 2 12 t plh input to yn c l = 30pf 3.0v & 3.6v 2 15 ns 4.5v & 5.5v 2 11 c l = 50pf 3.0v & 3.6v 2 19 ns 4.5v & 5.5v 2 15
packaging
6 ordering information: UT54ACS132E: smd drawing number: 96542 = UT54ACS132E device type: 02 = 1 rad(si)/sec package type: x = 14-lead ceramic botto m-brazed dual-in-line flatpack lead finish: (notes 1 & 2) a = solder c = gold x = optional 5962 ***** ** * * * * total dose: (note 3 & 4) r = 1e5 rads(si) f = 3e5 rads(si) g = 5e5 rads(si) h = 1e6 rads(si) 03 = 50 to 300 rads(si/sec) class designator: q = qml class q v = qml class v notes: 1. lead finish (a,c, or x) must be specified. 2. if an ?x? is specified when ordering, part marking will match the lead finish and will be either ?a? (solder) or ?c? (gold). 3. total dose radiation must be specified when ordering. qml q and qml v not available without radiation hardening. for protot ype inquiries, contact factory. 4. device type 02 is only offered with a tid tolerance guarantee of 3e5 rads(si) or 1e6 rads(si) and is tested in accordance wi th mil-std-883 test method 1019 condition a and section 3.11.2. device type 03 is only offered with a tid tolerance guarantee of 1e5 rads(si), 3e5 rads(si), and 5e5 rads(si), and is tested in accordance w ith mil-std-883 test method 1019 condition a.
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